Publications

Most articles with restricted access can be sent after request.

2017

Articles

 

2016

Articles

  • Amato M., Rurali R., « Surface Physics of Semiconducting Nanowires (invited review) », Progress in Surface Science, vol. 91, p. 1, 28 pages, 2016
  • Nghiem-Thi Thu -T., Saint-Martin J., Dollfus P., « Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons », Journal of Computational Electronics, vol. 15, num. 1, p. 3, 13 pages, 2016
  • Nguyen V.-H., Hoang T.-X., Dollfus P., Charlier J.-C., « Transport properties through graphene grain boundaries: strain effects versus lattice symmetry », Nanoscale, vol. 8, p. 11658, 16 pages, 2016
  • Nguyen V.-H., Dechamps S., Dollfus P., Charlier J.-C. « Valley filtering and electronic optics using polycrystalline graphene », Physical Review Letters, vol. 117, p. 247702, 6 pages, 2016
  • Nguyen V.-H., Dollfus P. « Transport gap in vertical devices made of incommensurately twisted graphene layers », Journal of physics. D. Applied physics, vol. 49, p. 045306, 7 pages, 2016
  • Zhou J., Zhao W., Wang Y., Peng S., Qiao J., Su L., Zeng L., Lei N., Liu L., Zhang Y., Bournel A., « Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions », Applied Physics Letters, vol. 109, p. 242403, 4 pages, 2016

PhD works

2015

Articles

  • Amato M., Rurali R. « Shell-Thickness Controlled Semiconductor−Metal Transition in Si−SiC Core−Shell Nanowires », Nano Letters, vol. 15, num. 5, p. 3425, 6 pages, 2015
  • Dollfus P., Nguyen V.-H., Saint-Martin J., »Thermoelectric effects in graphene nanostructures », Journal of physics. Condensed matter, vol. 27, p. 133204, 20 pages, 2015
  • Nguyen M.-C., Nguyen V.-H., Nguyen H.-V., Dollfus P., « Strong negative differential conductance in strained graphene devices », Journal of applied physics, vol. 118, p. 234306, 7 pages, 2015
  • Nguyen M.-C., Nguyen V.-H., Nguyen H.-V., Saint-Martin J., Dollfus P., « Enhanced Seebeck effect in graphene devices by strain and doping engineering », Physica. E, vol. 73, p. 207, 6 pages, 2015
  • Nguyen V.-H., Dollfus P., »Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer », 2D Materials, vol. 2, p. 035005, 9 pages, 2015
  • Nguyen V.-H., Nguyen H.-V., Saint-Martin J., Dollfus P., « Strain-induced conduction gap in vertical devices made of twisted graphene layers », Nanotechnology, vol. 26, p. 115201, 8 pages, 2015
  • Pouch S., Amato M., Bertocchi M., Ossicini S., Chevalier N., Mélin T., Hartmann J., Renault O., Delaye V., Mariolle D., Borowik L., « Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy », Journal of Physical Chemistry C, vol. 119, p. 26776, 7 pages, 2015
  • Su L., Zhang Y., Klein J.-O., Zhang Y., Bournel A., Fert A., Zhao W., « Current-limiting challenges for all-spin logic devices », Scientific Reports, vol. 5, p. 14905, 11 pages, 2015
  • Su L., Zhao W.-S., Zhang Y., Querlioz D., Zhang Y., Klein J.-O., Dollfus P., Bournel A., « Proposal for a graphene-based all-spin logic gate », Applied Physics Letters, vol. 106, p. 072407, 5 pages, 2015
  • Talbo V., Mateos J., Retailleau S., Dollfus P., Gonzalez T., « Time-dependent shot noise in multi-level quantum dot-based single-electron devices », Semiconductor Science and Technology, vol. 30, p. 055002, 7 pages, 2015
  • Tran V.-T., Saint-Martin J., Dollfus P., « Dispersive hybrid states and bandgap in zigzag Graphene/BN heterostructures », Semiconductor Science and Technology, vol. 30, num. 10, p. 105002, 12 pages, 2015
  • Tran V.-T., Saint-Martin J., Dollfus P., « High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering », Nanotechnology, vol. 26, p. 495202, 10 pages, 2015,
  • Vincent Adrien F., Locatelli N., Klein J.-O., Zhao W., Galdin-Retailleau S., Querlioz D., « Analytical Macrospin Modeling of the Stochastic Switching Time of Spin Transfer-Torque Devices », IEEE transactions on electron devices, vol. 62, num. 1, p. 164, 7 pages, 2015
  • Yahyaoui N., Sfina N., Lazzari J.-L., Bournel A., Said M., « Stark shift of the absorption spectra in Ge/Ge1-xSnx/Ge type-I single QW cell for Mid-Wavelength Infra-Red modulators », Superlattices and microstructures, vol. 85, p. 629, 9 pages, 2015
  • Yahyaoui N., Sfina N., Lazzari J.-L., Bournel A., Said M., « Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge0.964Sn0.036/Ge multiple quantum wells by quantum modelling », Semiconductor Science and Technology, vol. 30, p. 085016, 8 pages, 2015

PhD works

Before 2014

  • Alarcon A., Nguyen V.-H., Berrada S., Querlioz D., Saint-Martin J., Bournel A., Dollfus P., « Pseudo-saturation and negative differential conductance in graphene field-effect transistors », IEEE transactions on electron devices, vol. 60, num. 3, p. 985, 7 pages, 2013
  • Amato M., Rurali R., Palummo M., Ossicini S., « Understanding doping at the nanoscale: the case of codoped Si and Ge nanowires », Journal of physics. D. Applied physics, vol. 47, p. 394013, 10 pages, 2014
  • Amato M., Palummo M., Rurali R., Ossicini S., « Silicon-Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications », Chemical Reviews, vol. 114, p. 1371, 12 pages, 2014
  • Berrada S., Nguyen V.-H., Querlioz D., Saint-Martin J., Alarcón A., Chassat C., Bournel A., Dollfus P., « Graphene nanomesh transistor with high on/off ratio and good saturation behavior », Applied Physics Letters, vol. 103, p. 183509, 5 pages, 2013
  • Bourrelier R., Amato M., Galvao Tizei L.-H., Giorgetti C., Gloter A., Heggie M.-I., March K., Stéphan O., Rening L., Kociak M., Zobelli A., « Nanometric Resolved Luminescence in h-BN Flakes: Excitons and Stacking Order », ACS Photonics, vol. 1, p. 857, 6 pages, 2014
  • Falke S.-M., Rozzi C.-A., Brida D., Amato M., De Sio A., Rubio A., Cerullo G., Molinari E., Sommer E., Maiuri M., Lienau C., « Coherent ultrafast charge transfer in an organic photovoltaic blend », Science, vol. 344, num. 6187, p. 1001, 5 pages, 2014
  • Maneux C., Frégonèse S., Najari M., Zimmer T., Retailleau S., Nguyen H.-N., Querlioz D., Bournel A., Dollfus P., Triozon F., Niquet Y.-M., Roche S., « Multiscale simulation of carbon nanotube transistors », Solid state electronics, vol. 89, p. 26, 42 pages, 2013
  • Mazzamuto F., Saint-Martin J., Nguyen V.-H., Chassat C., Dollfus P., « Thermoelectric performance of defected and nanostructured graphene ribbons using Green’s function method », Journal of Computational Electronics, vol. 11, num. 1, p. 67, 11 pages, 2012,
  • Nedjalkov M., Selberherr S., Ferry D. K., Vasileska D., Dollfus P., Querlioz D., Dimov I., Schwaha P., « Physical scales in the Wigner-Boltzmann equation », Annals of Physics, vol. 328, num. 1, p. 220, 18 pages, 2013
  • Nghiêm-Thi T.-T., Saint-Martin J., Dollfus P., « New insights into self-heating in double-gate transistors by solving Boltzmann transport equations », Journal of applied physics, vol. 116, p. 074514, 9 pages, 2014
  • Nguyen M.-C., Nguyen V.-H., Nguyen H.-V., Dollfus P., « Conduction gap in graphene strain junctions: direction dependence », Semiconductor Science and Technology, vol. 29, p. 115
  • Nguyen V.-H., Alarcón A., Berrada S., Do V.-N., Saint-Martin J., Querlioz D., Bournel A., Dollfus P., « On the non-linear effects in graphene devices », Journal of physics. D. Applied physics, vol. 47, num. 9, p. 094007, 10 pages, 2014
  • Nguyen V.-H., Mazzamuto F., Bournel A., Dollfus P., « Resonant tunneling diode based on graphene/h-BN heterostructure », Journal of physics. D. Applied physics, vol. 45, p. 325104, 5 pages, 2012
  • Nguyen V.-H., Mazzamuto F., Saint-Martin J., Bournel A., Dollfus P., « Graphene nanomesh-based devices exhibiting strong effect of negative differential conductance », Nanotechnology, vol. 23, num. 6, p. 065201, 7 pages, 2012
  • Nguyen V.-H., Nguyen H.-V., Dollfus P., « Improved performance of graphene transistors by strain engineering », Nanotechnology, vol. 25, p. 165201, 7 pages, 2014
  • Nguyen V.-H., Nguyen H.-V., Saint-Martin J., Dollfus P., « Strain-induced conduction gap in vertical devices made of twisted graphene layers », Nanotechnology, vol. 26, p. 115201, 8 pages, 2015
  • Nguyen V.-H., Nguyen M.-C., Nguyen H.-V., Dollfus P., « Disorder effects on energy bandgap and electronic transport in graphene nanomesh based structures », Journal of applied physics, vol. 113, num. 1, p. 013702, 9 pages, 2013
  • Nguyen V.-H., Nguyen M.-C., Nguyen H.-V., Saint-Martin J., Dollfus P., « Enhanced thermoelectric figure of merit in vertical graphene junctions », Applied Physics Letters, vol. 105, p. 133105, 5 pages, 2014
  • Nguyen V.-H., Niquet Y.-M., Dollfus P., « Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings », Physical Review. B, vol. 88, p. 035408, 6 pages, 2013
  • Nguyen V.-H., Niquet Y.-M., Dollfus P., « Gate-controllable negative differential conductance in graphene tunneling transistors », Semiconductor Science and Technology, vol. 27, p. 105018, 7 pages, 2012
  • Nguyen V.-H., Niquet Y.-M., Dollfus P., « Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings », Journal of physics. Condensed matter, vol. 26, num. 20, p. 205301, 8 pages, 2014
  • Nguyen V.-H., Saint-Martin J., Querlioz D., Mazzamuto F., Bournel A., Niquet Y.-M., Dollfus P., « Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance », Journal of Computational Electronics, vol. 12, num. 2, p. 85, 9 pages, 2013
  • Pouch S., Amato M., Bertocchi M., Ossicini S., Chevalier N., Mélin T., Hartmann J., Renault O., Delaye V., Mariolle D., Borowik L., « Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy », Journal of Physical Chemistry C, vol. 119, p. 26776, 7 pages, 2015
  • Raine M., Hubert G., Paillet P., Gaillardin M., Bournel A., « Implementing realistic heavy ion tracks in a SEE prediction tool: comparison between different approaches », IEEE Transactions on Nuclear Science, vol. 59, num. 4, p. 950, 8 pages, 2012
  • Schwaha P., Querlioz D., Dollfus P., Saint-Martin J., Nedjalkov M., Selberherr S., « Decoherence effects in the Wigner function formalism », Journal of Computational Electronics, vol. 12, num. 3, p. 388, 9 pages, 2013
  • Shi M., Saint-Martin J., Bournel A., Querlioz D., Dollfus P., Mo J., Wichmann N., Desplanque L., Wallart X., Danneville F., Bollaert S., « Numerical and experimental assessment of charge control in III-V nano-Metal-Oxide-Semiconductor Field-Effect-Transistor under low supply voltage », Journal of Nanoscience and Nanotechnology, vol. 13, p. 771, 5 pages, 2013
  • Shi M., Saint-Martin J., Bournel A., Querlioz D., Wichmann N., Bollaert S., Danneville F., Dollfus P., « Monte Carlo analysis of the dynamic behavior of III-V MOSFETs for low-noise RF applications », Solid state electronics, vol. 87, num. 9, p. 51, 7 pages, 2013
  • Talbo V., Querlioz D., Retailleau S., Dollfus P., « Sub- and super-Poissonian noise in Si quantum dots using fully self-consistent 3D simulation », Fluctuation and Noise Letters, vol. 11, num. 3, p. 1242006, 12 pages, 2012
  • Tran V.-T., Saint-Martin J., Dollfus P., « Large on/off current ratio in hybrid Graphene/BN nanoribbons by transverse electric field-induced control of bandgap », Applied Physics Letters, vol. 105, p. 073114, 5 pages, 2014
  • Wilmart Q., Berrada S., Torrin D., Nguyen V.-H., Fève G., Berroir J.-M., Dollfus P., Plaçais B., « Klein-tunneling transistor with ballistic graphene », 2D Materials, vol. 1, p. 011006, 10 pages, 2014
  • Yahyaoui N., Sfina N., Lazzari J.-L., Bournel A., Said M., « Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well », Journal of applied physics, vol. 115, num. 3, p. 033109, 9 pages, 2014
  • Yahyaoui N., Sfina N., Lazzari J.-L., Bournel A., Said M., »Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1-xGex/Ge/Si1-xGex type-I quantum wells », European Physical Journal B – Condensed Matter, vol. 86, p. 59, 9 pages, 2013
  • Yahyaoui N., Sfina N., Lazzari J.-L., Bournel A., Said M., « Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetection », Physica status solidi, vol. C 11, num. 11-12, p. 1561, 5 pages, 2014

PhD works